| PART |
Description |
Maker |
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| BFC61 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BFC63 |
4TH GENERATION MOSFET
|
Seme LAB
|
| CX90240 |
V.22bis Modem with 4th Generation SmartDAA
|
Conexant Systems, Inc
|
| SHB131DGGA-I7-4650U SHB131DGGA-I3-4010U |
4th generation Intel U-series processors
|
Axiomtek Co., Ltd.
|
| DPX-S435-15 |
4th Generation Intel? Core?Gaming platform
|
Advantech Co., Ltd.
|
| C-BUNDLE-ARK1550-2 |
15 Intel 4th Generation Core i5 Modular Fanless Panel PC
|
Advantech Co., Ltd.
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| SML1004R2GXN |
4TH GENERATION MOSFET N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
| BFC19 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
| GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
